- 您现在的位置：买卖IC网 > Sheet目录415 > FDB3652_F085 (Fairchild Semiconductor)MOSFET N-CH 100V 61A D2PAK
SABER Electrical Model
REV March 2002
template FDP3652 n2,n1,n3
electrical n2,n1,n3
{
var i iscl
dp..model dbodymod = (isl=1.5e-11,nl=1.06,rs=2.5e-3,trs1=2.4e-3,trs2=1.1e-6,cjo=1.9e-9,m=5.8e-1,tt=2.5e-8,xti=3.9)
dp..model dbreakmod = (rs=2.7e-1,trs1=1e-3,trs2=-8.9e-6)
dp..model dplcapmod = (cjo=7e-10,isl=10e-30,nl=10,m=0.58)
m..model mmedmod = (type=_n,vto=3.6,kp=5.5,is=1e-30, tox=1)
m..model mstrongmod = (type=_n,vto=4.3,kp=110,is=1e-30, tox=1)
m..model mweakmod = (type=_n,vto=3,kp=0.03,is=1e-30, tox=1,rs=.1)
sw_vcsp..model s1amod = (ron=1e-5,roff=0.1,von=-8,voff=-5)
LDRAIN
sw_vcsp..model s1bmod = (ron=1e-5,roff=0.1,von=-5,voff=-8)
DPLCAP
5
DRAIN
sw_vcsp..model s2amod = (ron=1e-5,roff=0.1,von=-1,voff=0.5)
sw_vcsp..model s2bmod = (ron=1e-5,roff=0.1,von=0.5,voff=-1)
c.ca n12 n8 = 1.1e-9
c.cb n15 n14 = 1.1e-9
c.cin n6 n8 = 2.8e-9
10
RSLC2
RSLC1
51
ISCL
RLDRAIN
2
9
20
dp.dbody n7 n5 = model=dbodymod
dp.dbreak n5 n11 = model=dbreakmod
dp.dplcap n10 n5 = model=dplcapmod
spe.ebreak n11 n7 n17 n18 = 108.2
spe.eds n14 n8 n5 n8 = 1 GATE
spe.egs n13 n8 n6 n8 = 1 1
spe.esg n6 n10 n6 n8 = 1
spe.evthres n6 n21 n19 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
LGATE
RLGATE
-
ESG
+
EVTEMP
RGATE + 18 -
22
6
8
6
EVTHRES
+ 19 -
8
CIN
50
RDRAIN
16
21
MMED
MSTRO
8
DBREAK
11
MWEAK
EBREAK
+
17
18
-
7
DBODY
LSOURCE
SOURCE
3
i.it n8 n17 = 1
RSOURCE
RLSOURCE
l.lgate n1 n9 = 7.16e-9
l.ldrain n2 n5 = 1.0e-9
12
S1A
13
8
S2A
14
13
15
17
RBREAK
18
l.lsource n3 n7 = 2.29e-9
S1B
S2B
RVTEMP
res.rlgate n1 n9 = 71.6
res.rldrain n2 n5 = 10
res.rlsource n3 n7 = 22.9
CA
13
+
EGS
6
8
CB
+
EDS
5
8
14
IT
19
-
VBAT
+
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
-
-
8
22
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
res.rbreak n17 n18 = 1, tc1=1.05e-3,tc2=1e-6
res.rdrain n50 n16 = 5.7e-3, tc1=1.7e-2,tc2=3.2e-5
res.rgate n9 n20 = 1.06
res.rslc1 n5 n51 = 1e-6, tc1=1e-3,tc2=1e-7
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 6.5e-3, tc1=1e-3,tc2=1e-6
res.rvthres n22 n8 = 1, tc1=-5.3e-3,tc2=-1.2e-5
res.rvtemp n18 n19 = 1, tc1=-3.3e-3,tc2=1.3e-6
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/150))** 7))
}
}
RVTHRES
?200 8 Fairchild Semiconductor Corporation
9
FDB3652 _F085 Rev. A 1
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
FDB3672_F085
MOSFET N-CH 100V 44A D2PAK
FDB3860
MOSFET N-CH 100V 6.4A D2PAK
FDB390N15A
MOSFET N-CH 150V 27A D2PAK
FDB44N25TM
MOSFET N-CH 250V 44A D2PAK
FDB52N20TM
MOSFET N-CH 200V 52A D2PAK
FDB5800_F085
MOSFET N-CH 60V 80A D2PAK
FDB6030L
MOSFET N-CH 30V 48A D2PAK
FDB6670AL
MOSFET N-CH 30V 80A D2PAK
相关代理商/技术参数
FDB3652_Q
功能描述:MOSFET N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB3652SB82059
制造商:Rochester Electronics LLC 功能描述:- Bulk
FDB3672
功能描述:MOSFET 100V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB3672_09
制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 100V, 44A, 28m??
FDB3672_F085
功能描述:MOSFET 100V 44A N-Channel PowerTrench
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB3682
功能描述:MOSFET 100V N-Channel Pwr Trench
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB-37PF
制造商:HRS 制造商全称:HRS 功能描述:FD TYPE CONNECTOR FOR RIBBON CABLE
FDB-37SF
制造商:HRS 制造商全称:HRS 功能描述:FD TYPE CONNECTOR FOR RIBBON CABLE